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EL SEGUNDO, Calif.--(BUSINESS WIRE)--EPC, the world’s leader in enhancement-mode gallium nitride on silicon (eGaN) power FETs and ICs, advances the performance capability while lowering the cost of off-the-shelf gallium nitride transistors with the introduction of the EPC2215 and EPC2207 200 V eGaN FETs. The applications for these leading-edge devices include class-D audio, synchronous rectification, solar MPPTs (maximum power point tracker), DC-DC converters (hard-switched and resonant), and multilevel high voltage converters.

The EPC2215 (8 mΩ, 162 Apulsed) and the EPC2207 (22 mΩ, 54 Apulsed) are about half the size of the prior generation 200 V eGaN devices and double the performance. The performance advantage over a benchmark silicon device is even higher. The EPC2215 has 33% lower on-resistance, yet is 15 times smaller in size. Gate charge (QG) is ten times smaller than the silicon MOSFET benchmark with the new technology, and like all eGaN FETs, there is no reverse recovery charge (QRR) enabling lower distortion class D audio amplifiers as well as more efficient synchronous rectifiers and motor drives.

ディスクリート半導体製品 - トランジスタ - FET、MOSFET - シングル はDigiKeyに在庫があります。ご注文は今すぐ!. Fourth Generation eGaN FETs Widen Performance Gap Over Silicon FETs. Efficient Power Conversion has raised the bar for GaN FET performance through its Gen 4 GaN FETs. The new parts exhibit reduced on-resistance and inductance. They allow high current and power density and permit higher frequency operation. EPC, a maker of enhancement-mode GaN on silicon (eGaN) power FETs and ICs, has introduced the EPC2055 (3 mΩ, 40 V) eGaN FET. This device is suitable for applications with demanding requirements for performance in space-constrained form factors including USB-C battery chargers and ultra-thin point-of-load (POL) converters. Other low-voltage applications benefiting from the fast-switching spee. NCIS (TV Series 2003– ) cast and crew credits, including actors, actresses, directors, writers and more.

According to Alex Lidow, EPC’s co-founder and CEO, “This latest generation of eGaN FETs achieve higher performance in a smaller, more thermally efficient size, and at a comparable cost to traditional MOSFETs. The inevitable displacement of the aging power MOSFET with GaN devices is becoming clearer every day.”

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EPC worked in collaboration with Semiconductor Power Electronics Center (SPEC) at University of Texas at Austin to develop a 400 V, 2.5 kW-capable eGaN FET-based four-level flying capacitor multilevel bridgeless totem-pole rectifier that is suitable for data center applications using the new EPC2215 200 V device. Professor Alex Huang from the University of Texas at Austin commented that, “the advantageous characteristics of eGaN FETs allowed this converter to achieve high power density, ultra-high efficiency, and low harmonic distortion.”

Price and Availability

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Pricing for products and related development and reference design boards are noted in the table below. All products and boards are available from Digi-Key at http://www.digikey.com/Suppliers/us/Efficient-Power-Conversion.page?lang=en

Part
Number

2.5K Reel
Price/Unit

Half-Bridge
Development
Board

Price per
board

$2.84

$118.75

$1.49

$118.75

Epc2207

Gan fet manufacturers

About EPC

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EPC EGaN FET Die Attachment Tutorial

EPC is the leader in enhancement-mode gallium nitride-based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (Lidar), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs. Aeon timeline windows. EPC also has a growing portfolio of eGaN-based integrated circuits that provide even greater space, energy, and cost efficiency.

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Visit our web site: www.epc-co.com

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eGaN is a registered trademark of Efficient Power Conversion Corporation, Inc.